2
RF Device Data
Freescale Semiconductor
MRF377HR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Drain--Source Breakdown Voltage
(4)
(VGS
=0Vdc,ID
=10
μA)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(4)
(VDS
=32Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μA)
VGS(th)
?
2.8
?
Vdc
On Characteristics
Gate Quiescent Voltage
(3)
(VDS
=32Vdc,ID
= 2000 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=3A)
VDS(on)
?
0.27
?
Vdc
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(VDS
=28Vdc,VGS
=0,f=1MHz)
Crss
?
3.2
?
pF
Functional Tests
(3)
(In DVBT OFDM Single--Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
Gps
16.5
18.2
?
dB
Drain Efficiency
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
ηD
21
22.9
?
%
Adjacent Channel Power Ratio
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
ACPR
?
--59.2
-- 5 7
dBc
Typical Performances
(3)
(In DVBT OFDM Single--Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
?
?
?
?
?
17.6
17.6
17.4
17.4
16.8
?
?
?
?
?
dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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